Abstract
This paper presents a three-phase cascaded five-level H-bridge quasi-switched boost inverter (CHB-qSBI). The merits of the CHB-qSBI are as follows: single-stage conversion, shoot-through immunity, buck-boost voltage, and reduced passive components. Furthermore, a PWM control method is applied to the CHB-qSBI topology to improve the modulation index. The voltage stress across power semiconductor devices and the capacitor are significantly lower using improved pulse-width modulation (PWM) control. Additionally, by controlling individual shoot-through duty cycle, the DC-link voltage of each module can achieve the same values. As a result, the imbalance problem of the DC-link voltage can be solved. A detailed analysis and operating principle with the modulation scheme and comprehensive comparison for the CHB-qSBI are illustrated. The experimental and simulation results are presented to validate the operating principle of the three-phase CHB-qSBI.
Highlights
Nowadays, multilevel inverters are attractive for high power high voltage applications due to their well-known properties
The output voltage of the cascaded H-bridge (CHB) inverter has a high number of levels and reaches medium voltage which results in removing the boost transformer and dropping the size of the output filter
To explore more features of the three-phase CHB-quasi-switched boost inverter (qSBI), this paper presents the operating theories, circuit analysis, and experimental verification of the three-phase CHB-qSBI in detail
Summary
Multilevel inverters are attractive for high power high voltage applications due to their well-known properties. Neutral point clamped (NPC), flying capacitors, and cascaded H-bridge (CHB) inverters [4,5,6,7,8,9,10,11,12,13,14] are three basic multilevel inverter structures Among these structures, the CHB structures [9,10,11,12,13,14] have unique merits: higher output voltage, flexibility, and power levels. With using a simple boost method, the CHB-qSBI in [24,25] must use a small modulation index to be able to achieve a high voltage gain. The stress voltage across power semiconductor devices and the capacitor is significantly dropped in comparison to CHB-qSBI with using conventional PWM control.
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