Abstract
Using four magnetic layers, NiFe, NiFeCo, NiFeCo*, and Co with different coercivities, NiFe/Cu/NiFeCo/Cu/NiFeCo*/Cu/Co multilayered structure has been prepared on 4° tilt-cut Si(111) substrate by radio frequency magnetron sputtering method. Co, NiFeCo*, and NiFeCo are used as storage layers and NiFe used as a sensing layer. With proper external magnetic fields applied three memory levels can be separated. After separating the memory levels, six memory states can be distinguished with the magnetization reversal of the sensing layer, NiFe. As the spacer Cu thickness decreases, the interaction with the other magnetic layers increases gradually to ferromagnetic interaction. With 2 nm Cu spacer, we could see that the switching field of the hardest magnetic layer decreased by about 30%, compared to other cases. In order to demonstrate the industrial applicability, samples have been patterned by conventional photolithography technology into small size and its switching characteristics in small size have also been confirmed.
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