Three-Dimensional Visualization Technique for Crystal Defects in High Performance p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Embedded SiGe Source/Drain

Abstract

We have performed a detailed analysis of crystal defects in high-performance p-channel metal–oxide–semiconductor field-effect transistors (pMOSFETs) with embedded SiGe source/drain (S/D), using low-angle annular dark field (ADF) scanning transmission electron microscopy (STEM) and electron tomography. We achieved successful results in three-dimensional visualization of crystal defects for the first time. Consequently, we have discussed about the three-dimensional physical geometric relationship between crystal defects and device architecture. This approach is sure to contribute to the development of advanced complementary metal–oxide–semiconductor (CMOS) devices using strained silicon technology.