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Abstract
We apply a three-dimensional (3D) semiclassical ensemble Monte Carlo simulation method to study T-branch junctions based on InGaAs/InAlAs heterostructures and obtain an accurate insight into the physics behind the operation of such structures. Electron transport in these devices is investigated and their rectifying behavior is demonstrated at 77 and 300 K and for different branch sizes. Detailed device analysis is performed to establish the relationship between the extent of ballistic transport and the rectifying behavior of the junctions and show the influence of surface charge effects, which are carefully included in the model. Results from the simulation of a T-branch junction with a Schottky gate terminal are presented, demonstrating the necessity of using 3D simulation models to study the physics of semiconductor junctions.
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