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Abstract
By using a semi-classical two-dimensional Monte Carlo simulation, simple devices(T-branch junctions (TBJs) and rectifying diodes) based on AlInAs/InGaAsballistic channels are analysed. Initially, the model is validated by means ofHall-effect measurements of mobility and electron concentration in long (diffusive)channels. Then, quasi-ballistic transport at room temperature is confirmed in a100 nm channel. Our simulations qualitatively reproduce the experimental resultsof electric potential measured in a TBJ appearing as a result of electron ballistictransport, and in close relation with the presence of space charge inside thestructure. As examples of devices exploiting the ballistic transport of electrons,preliminary simulations of a multiplexor/demultiplexor and a rectifying diodeare presented, demonstrating their capability for terahertz operation.
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