Three-dimensional magneto-resistive random access memory devices based on resonant spin-polarized alternating currents

Abstract

Selective switching of a magneto-resistive random access memory (MRAM) multilayer stack is demonstrated using resonant spin-polarized alternating currents (AC) superimposed on spin-polarized direct currents. Finite element micromagnetic simulations show that the use of frequency triggered AC allows one to maximize the transferred spin transfer torque selectively in order to merely reverse the magnetization of a single storage layer in a stack. Using layers with different resonance frequencies, which are realized by altering the anisotropy constants, allows one to address them by tuning the AC frequency. A rapid increase of the storage density of MRAM devices is shown by using three-dimensional sandwich structures.