Abstract
Finite Elements Method simulation of Total Ionizing Dose effects on 22nm bulk Fin Field Effect Transistor (FinFET) devices using the commercial software Synopsys Sentaurus TCAD is presented. The simulation parameters are extracted by calibrating the charge trapping model to experimental results on 400nm SiO2 capacitors irradiated under zero bias. The FinFET device characteristics are calibrated to the Intel 22nm bulk technology. Irradiation simulations of the transistor performed with all terminals unbiased reveal increased hardness up to a total dose of 1MRad(SiO2).
Highlights
Exposure of deep sub-micron n-channel devices to ionizing radiation degrades electrical performance by inducing leakage paths due to positive charges gathering in the field oxides and at Si/SiO2 interfaces
This creates off-state current through parasitic devices, that in extreme cases can impede the transistor from turning off leading to major faults and catastrophic failure in Integrated Circuits
We examine Total Ionizing Dose (TID) effects in Fin Field Effect Transistor (FinFET) devices
Summary
Exposure of deep sub-micron n-channel devices to ionizing radiation degrades electrical performance by inducing leakage paths due to positive charges gathering in the field oxides and at Si/SiO2 interfaces. This creates off-state current through parasitic devices, that in extreme cases can impede the transistor from turning off leading to major faults and catastrophic failure in Integrated Circuits. In Silicon-On-Insulator FinFETs, the TID effect has been shown to depend on the geometry of the fin [4,5], while in bulk FinFET technologies its appearance is attributed mainly to charges gathering in the Shallow Trench Isolation (STI) at the neck of the fin [6]. The simple case of charge accumulation within the STI in bulk 22 nm nFinFETs under TID is presented
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
