Abstract
Elastic scattering couples the quasi one-dimensional (1D) motion of electrons responding to an applied electric field in growth direction of a semiconductor superlattice effectively to the lateral degrees of freedom. We describe the superlattice by a simple miniband and elastic scattering explicitly by an appropriate collision term in Boltzmann's equation. As a function of the applied field, we calculate the heating of the electron system and its drift velocity, which shows pronounced negative differential conductance. Our results are qualitatively different from those of previous ID theories, but compare favorably with results of recent experiments and balance-equation calculations.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call