Abstract
We present the hole subband structure calculation in double δ-doped (DDD) quantum wells in Si. We have used an analytical expression for the Hartre-Fock potential previously obtained within the lines of the Thomas-Fermi-Dirac (TFD) approximation. We have analysed the hole levels as a function of the interlayer distance as well as for different densities of impurities. It is found a difference of 60 Å in the degeneration distance of the system with and without exchange effects in the low impurity density regime (p2D = 1 × 1012 cm–2), while in the high impurity density such difference is about 5 Å. We also present the mobility ratio between DDD and simple δ-doped (SDD) quantum wells. We have found the interlayer distance for the maximum mobility for the whole range of impurities. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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