Abstract
We present the electronic structure calculation of two closely n-type δ-doped quantum wells within the lines of the Thomas–Fermi (TF) theory. The distance between the impurity planes as well as the impurity density of the δ-doped planes is varied. The exchange effects are also analyzed in the present study. We have found a degeneration distance for the ground state of 360 and 400Å with and without exchange effects, respectively (n2D=3.0×1012cm−2). We also calculate the mobility ratio of double δ-doped (DDD) GaAs quantum wells respect to a single δ-doped (SDD), finding the optimum distance between wells for the maximum mobility. Our results are in a good agreement with respect to the optical and transport measurements available.
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