Abstract
It is an extended version of the mathematical analysis of the proposed 3rd order Band Pass Filter (BPF). This device design uses the Double-Gate (DG) MOSFET’s which provides a better performance and reliability of the band pass filter. This 3rd order BPF design improves the device performance characteristics, such as enhanced power efficiency and switching capabilities, due to the properties of DG MOSFET technology. Simulation analysis of the proposed filter model has been performed. The BPF model has been designed for lower and upper cut-off frequencies of 100 kHz and 1.7 MHz, respectively. The 3rd order BPF filter has been modeled to have Butterworth characteristics, thus having a maximally flat pass-band response.
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