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Abstract
Fast surface states at the silicon-silicon dioxide interface have been studied using the MOS capacitor structure with a very thin oxide (50–100 Å), which greatly enhances the effect of the surface states on the capacitance-voltage characteristics. On p-type silicon, a surface-state distribution with a peak at 0.3 eV above the valence band is observed. Comparison of the experimental results with theoretical calculations based on the equivalent circuit model is made. Total density of state of 5.4×1012/cm2 with a peak of 3×1013 surface states/cm2 eV are observed.
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