Thin Pb(ZrxTi1− x )O3 (PZT) Rhombohedral Compositions Deposited on the Si-Substrate and Its Non-Linear Piezoelectric Response

Abstract

This paper presents some nonlinear piezoelectric properties and strain simulation in lead zirconate-titanate Pb(Zr x Ti1 − x )O 3 (PZT) thin films, sputtered on the Pt/Ti/SiO 2 /Si substrates. The samples PZT (60/40), (111) orientation, rhombohedral phase composition, and PZT (54/46), (001) near MPB were prepared. Thicknesses of the samples under test were estimated as 1.1, 1.3 and 2.2 μ m respectively. For first characterizations, X-ray diffraction (XRD), piezoelectric hysteresis, capacitance-voltage C(V) and strain vs. temperature dependencies were carried out. The effective piezoelectric coefficient d 33, eff ≈ 110 pm/V was found for PZT (60/40), and d 33, eff ≈ 70 pm/V for PZT (54/46) at room temperature, if the biasing electric field goes slowly from the one state to opposite state by 10 mHz, using the monitoring field of the amplitude 0.09 MV/m and frequency 1 kHz. The non-linear behaviour of the PZT thin film, as the effective d 33, eff vs. electric field was investigated by double beam laser interferometer and optical helium cryostat. Comparing our previously obtained data, the results are discussed. As consequences, the strain distribution in active thin PZT film area under top electrode was provided by FEM (ANSYS 8.0) and demonstrated in the contribution. Simulation of the dynamic deformation of the active thin PZT film area was presented during the conference ECAPD8.