Thin [formula omitted] strip detectors produced by PPPP process

Abstract

A new technology for silicon detector production called Planar Process Partially Performed on the Thin Silicon Membrane (PPPP process) is described. Using this method a self-biased, transmission Δ E , 52 μ m thick strip detector was produced and tested. The detector sensitive depth (region of the detector from which created electron–hole pairs are collected) was about 36 μ m . The n - – n + structure produced by about 50 μ m of high-resistivity ( 2000 Ω cm ) layer epitaxially grown on 300 μ m of low-resistivity substrate was used for the detector construction. The n - – n + wafer was manufactured in the Institute of Electronic Materials Technology. The detector performance as a E – Δ E telescope (formed with an independent 400 μ m E detector) was tested using light charged particles (p,d,t, α ) produced in the p( 9Be,X) reaction at 22 MeV energy. An energy resolution of the Δ E detector was measured to be about 100 keV.