Response to light charged particles and heavy ions of thin, large area [formula omitted] strip detectors produced by the PPPP process

Abstract

Large area thin strip detectors with build-in electric field are among possible choices to provide radiation-hard detectors for future high-energy physics experiments and heavy ion applications. Among the advantages of thin detectors with build in field are the very low detector bias voltage and reduced material cost. A new technology for silicon detector production called Planar Process Partially Performed on the Thin Silicon Membrane (PPPP process) is described. Using this method the transmission Δ E , 52 and 22 μ m thick strip detectors operated at 5 V bias potential were produced and tested. The n - – n + structures produced by about 50 μ m of high resistivity ( 2000 Ω cm ) layer epitaxially grown on 400 μ m of low resistivity substrate were used for the detector construction. The n - – n + wafers were manufactured in the Institute of Electronic Materials Technology. The detectors performance as E – Δ E telescopes (associated with an independent 400 μ m E detector) was tested using the light charged particles from the reaction 12C( 14N,X) and heavy ions (Li, Be, B, C, N) produced in the 9B( 14N,X) reaction at 89.6 MeV beam energy. An energy resolution of the Δ E detector measured with the 6.05 and 6.09 MeV α -particles from 212Bi was about 110 keV. This paper describes the new technological approach used for fabrication of the devices and reports some results from light charged particles and heavy ion measurements.