Abstract
This paper documents the manufacture and testing of a humidity sensor based on a combination of In2O3/SiO. A number of different sensor samples have been produced by thermal deposition and the effect of varying the vacuum pressure has also been investigated. The AC and DC conduction mechanisms have been investigated. From the AC conduction studies, the tunneling conduction mechanism has been observed at low frequencies and the hopping conduction mechanism, for the majority of sensor samples, has been observed at high frequencies. The DC conduction mechanisms have indicated the possibility of spacecharge-limited conduction. The sensor with the highest humidity sensitivity of 1.145%/RH% is 85%In2O3/15%SiO, which is produced at a vacuum pressure of 2×10-4 mbar.From the point of view of temperature stability, the 55%In2O3/45%SiO samples produced at a vacuum pressure of 2×10-4 mbar exhibit the lowest temperature sensitivity, 0.3%/oC.
Highlights
Humidity is a constant environmental factor; its accurate measurement and control are very important
When a new material is investigated for use as a humidity sensor, there will be a number of initial questions, including the mechanisms by which the sensor conducts, the sensitivity of the sensor to humidity and cross-sensitivity to temperature
For the high pressure samples a decrease in temperature sensitivity is observed with decreasing In2O3
Summary
Humidity is a constant environmental factor; its accurate measurement and control are very important. Humidity sensors are generally required in areas including domestic electric appliances, the medical industry, the agricultural industry and the automobile industry. The materials used for humidity sensing can be grouped into three types: electrolytes, organic polymers and ceramics [1]. Depending on the requirement of the final humidity sensor, the ceramic sensor can be produced in both thick and thin film form [2]. In terms of miniaturization and integration in electronic circuits thin. Sensors 2002, 2 film sensors are the more desirable candidates [3]. The final use of this sensor is to incorporate it into a portable handheld measurement system. A thin film sensor has been investigated from In2O3/SiO
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