Abstract
We present experimental results on thin-film wafer fusion of InP/GaAs to fabricate InP-based lasers on a GaAs substrate. We have studied the load pressure dependence of the photoluminescence intensity (PL) of the InP-based layers and electrical properties at the fused interface. Although a higher load pressure results in better electrical contact, it can degrade the PL intensity of InP-based quantum-wells structure fused to a GaAs substrate due to the generation of recombination centers. Buried-heterostructure InP-based lasers are consequently fabricated on a GaAs substrate by thin film wafer fusion, and these lasers are demonstrated to have good performance under continuous-wave operation.
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