Molecular beam epitaxy of GaSb and InGaSb

Abstract

Undoped GaSb and In x Ga 1− x Sb (0 < x < 0.2) were grown on Te-doped GaSb(100) and Cr-doped GaAs(100) substrates. The quality of the films grown on GaSb was better than that of the films grown on the GaAs substrates. But the electrical isolation by the p-n junction between the grown films and the GaSb substrates was insufficient; therefore, GaAs substrates were subsequently used instead of the GaSb substrates to facilitate the determination of the electrical properties of the grown films. To relax the huge lattice mismatch between the films and the GaAs substrates and thereby improve the electrical properties, a buffer layer of AlSb and AllnSb was successfully grown and effectively used.