Abstract
A ZnO thin film was deposited on a Si wafer having an oxidized SiO2 layer using a chemical solution deposition process and was applied to a bottom-gate type thin film transistor (TFT). The films prepared by combined heating at 600° and 900°C exhibited typical enhancement-type TFT characteristics with electrons as carriers. The low heating temperature around 600°C degraded the insulating properties of the SiO2 layer but high temperature annealing recovered that.
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