Abstract
Chromium nitride (CrN) thin films were fabricated onto Si wafers by RF magnetron sputtering equipment in pure N 2 gas. By adjusting the fabrication conditions, the film had negative temperature coefficient of resistance (TCR) below 300 K. It showed reasonable sensitivity between 300 and 1.8 K. The temperature resolution in the cryogenic temperature region was better than 1 mK. A good thermal cycle stability was observed. After 27 thermal cycles between 4 and 300 K, the coefficient of variation (CV) value was as small as 0.098% at 4 K, which corresponds to a 2.1 mK temperature shift. In addition, the thermometer was nearly insensitive to the magnetic field. The temperature shift due to magnetoresistance in a magnetic field of 9 T was less than 5 mK at 4 and 2 K. Therefore CrN can be an excellent choice of material for cryogenic temperature sensors under magnetic fields.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
