Abstract
The effect of Indium (In) doping on CdTe thin film solar cells was investigated. CdTe thin films were deposited using the elemental vapor transport (EVT) technique under various Cd/Te gas phase ratios and In vapor concentrations. TCO/Buffer/n-CdTe/p-ZnTe solar cells have been fabricated and characterized. Indium doping has been found to affect the device performance. Capacitance-voltage (C-V) measurements revealed that net n-type doping increased with In concentration during the EVT deposition. Spectral response (SR) measurements indicated an enhanced carrier collection at higher In concentrations. The open-circuit voltage ($\text{V}_{\mathbf {OC}}$) and fill factor (FF) of the devices was found to increase with increased n-type doping and therefore builtin voltage. To-date n-type CdTe solar cells yielded devices with $\text{V}_{\mathbf {OC}} \quad =$ 730 mV, $\text{J}_{\mathbf {SC}} \quad =$ 20 mA/cm$^{\mathbf {2}} {, \mathbf {FF}} =$textbf 62 % and efficiency near 9 %.
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