Abstract
Atomic-scale analyses represent oxygen-containing layers near grain boundaries in Cu2ZnSnSe4 films. In article number 1501902, Sung-Yoon Chung and co-workers identify the presence of nanoscale layers in which oxygen is substantially substituted for Se. Theoretical calculations demonstrate that oxygen substitution lowers the valence band maximum and thus makes a key contribution to the formation of a barrier blocking the holes from bulk grains.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
