Abstract
This paper describes properties of thin-film SOI devices. Conventional SOI devices offer well-known advantages over bulk devices such as radiation hardness, reduced parasitic capacitances and latch-up immunity. When the devices are made in thin silicon films, a new class of interesting properties can be obtained. Among those let us mention sharp subthreshold slopes, reduction of floating-substrate effects and reduction of the short-channel effect. Novel SOI devices based on both majority and minority carrier transport will be discussed.
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