Abstract
Hydrogenated amorphous and microcrystalline silicon thin film solar cells were fabricated on ZnO/SnO2:F/glass structured substrate by transformer coupled plasma chemical vapor deposition(TCP-CVD) techniques. Asahi U-type glass (SnO2:F coated glass) widely used as a substrate for amorphous silicon thin film solar cells has a critical problem to be reduced in H2 plasma. In this research, we investigated the effects of ZnO thin films used as a reduction barrier on the characteristics of solar cells by varing the thickness of ZnO films on Asahi U-type glass. The I-V characteristics of Al/n/i/p/ZnO/SnO2/glass structured (called the 'superstrate' configuration) solar cells were measured at AM1.5, 100 mW/cm2 and Voc (open circuit voltage), Jsc (short cuicuit current density), FF (fill factor), Eff (efficiency) of these cells were calculated.
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