Abstract

SnO 2 thin films were prepared using SnCl 4 and O 2 as precursors by means of plasma enhanced chemical vapour deposition (PECVD) method, and were modified with CuO by soaked technique to form a SnO 2-CuO-SnO 2 sandwich structure. The sensing composite thin film sensors were proved to be highly sensitive and selective to H 2S. Furthermore, the response and recovery speed of the thin film sensors was fairly quick.

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