Abstract
The thin films of Barium Strontium Titanate (BST) material of Ba<sub>0.1</sub>Sr<sub>0.9</sub>TiO<sub>3</sub> were fabricated using sol-gel method and annealed at temperature 600 °C, 650 °C and 700 °C in order to obtain its crystalline structure. The thin films of BST were characterized using FESEM, XRD and Impedanceof Spectroscopy. The results of characterization use FESEM at temperature of 600 °C, 650 °C and 700 °C to obtainin thickness such as 51,36nm; 53,59nm and 87,09nm. The results of characterization use XRD with the temperature annealing. its angle 10,26° at temperature 600 °C, 650 °C and 700 °C to obtain the intensity 244, 280 and 300.
Highlights
The development of the era of many changes that occurs in materials is often studied by scientists of science
Light sensor made of thin film material Ba0,5Sr0,5TiO3 above Si substrate (100) p-type by means of chemical-assisted chemical solution deposition (CSD) method [2].The capacitor is one of the electronic devices that play an important role in the electronics circuit
These thin films will be characterized using X-ray Diffraction, FESEM and Impedance Spectroscopy, where the characterization using FESEM to obtain the thickness of the sample and characterization using impedance spectroscopy to obtain the value of the dielectric constant can be calculated using the equation: ε ' = c′d ε0A
Summary
The development of the era of many changes that occurs in materials is often studied by scientists of science. The BaSrTiO3 material in the last year is highly reviewed and developed, from the above-mentioned ferroelectric thin films Ba0.8Sr0.2TiO3 which acts as a dielectric to increase the capacitance value of the capacitor [1]. The Ti ion is at the center and the three oxygen atoms are at the center of the face This structure will cause the Ba2 + ions in BaTiO3 to be replaced by Sr2 + ions. Copyright © All rights are reserved by Rahmi Dewi These thin films will be characterized using X-ray Diffraction, FESEM and Impedance Spectroscopy, where the characterization using FESEM to obtain the thickness of the sample and characterization using impedance spectroscopy to obtain the value of the dielectric constant can be calculated using the equation:.
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