Abstract
This work focuses on the effect of deposition temperature and post deposition annealing (PDA) in different gas ambient on the electrical properties of R.F. sputter deposited ferroelectric Barium Strontium Titanate (Ba0.5Sr0.5TiO3) thin film capacitors. Approximately 2000A of Barium Strontium Titanate (BST) thin film was deposited at different substrate temperatures (400, 450, 500 and 550°C) on cleaned silicon substrates. These BST films were then annealed separately in 100% N 2 , 100% O 2 and 10% O 2 + 90% N 2 at 575°C in the same sputtering system (PVD anneal) as well as in a tube furnace.
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