Abstract

A high-current, mass-separated low energy ion beam deposition system with dual ion sources, which utilizes acceleration-deceleration method, has been developed to create new functional materials, especially those having multi-layered structure. In this system, the maximum ion currents obtained at the ion energy of 100 eV are 5.1 mA for Ar + ions and 5.3 mA for Ca + ions. The deceleration characteristics in the high current region at the ion energy below 100 eV are described. Epitaxial growth of α-Fe film on the Si(111) substrate has been also carried out at room temperature using this system. The dependence of beam diameter on Fe + ion current and the dependence of the film quality on Fe + ion energy are discussed.

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