Abstract
Mass-separated low energy ion beams provide clean, well defined, and controllable deposition conditions for film growth and are thus particularly suited to study basic mechanisms of thin film growth. The recent advances and emerging applications of mass-separated ion beam deposition (MSIBD) are discussed. During the last years MSIBD has been extensively applied to study the growth of tetrahedral amorphous carbon (ta-C) and cubic boron nitride (c-BN) films. The nucleation and growth conditions are discussed and compared with model predictions. The microstructure and properties of F-, B- and N- containing carbon films are briefly discussed.
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