Abstract
In this research, the annealing method in solvent vapor was adapted to produce single-crystal thin films of oligomers based on thiophene and benzene. Monocrystalline silicon substrates with a layer of silicon oxide deposited on it were used. Monocrystals grew from the solutions directly on substrates at a room temperature. Variable parameters for crystal growth were: solvent type (toluene, dichlorobenzene), solution concentration (from 1 g l−1 to 0.03 g l−1), method of application (spin-coating, drop-casting). The crystallinity and geometry of the synthesized single crystals were determined on a Carl Zeiss AXIO LAB.A1 microscope by microscopy and polarization microscopy.The substrates are already a complete part of the OTFT architecture (gate and dielectric layer). After plotting contacts of PEDOT:PSS organic field-effect transistors were obtained and they electrophysical characteristics were measured. It is established that in the obtained OTFT semiconductor crystals has hole conductivity with a hole mobility μ = 0.03 cm2 V−1 s−1 in a linear mode.
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