Thin Film Dielectrics for Electronics Using Combustion Chemical Vapor Deposition

Abstract

AbstractThis paper reviewed work to date on multicomponent oxides deposited, utilizing openatmosphere Combustion Chemical Vapor Deposition for electronic applications. Epitaxial barium strontium titanate and strontium titanate thin films were deposited on (100) MgO single crystal substrates. They were patterned to form interdigitated structures for electrically tunable devices, namely, coupled microstripline phase shifters (CMPS). The undoped, as-deposited perovskite dielectrics exhibited a figure of merit of 53°/dB at 20 GHz and 23°C, indicating high degree of tunability and fairly low loss. High-permittivity (ε=263), polycrystalline BST and SrTiO3 were studied for dynamic random access memory, and leakage current density of 10−7 A/cm2 was measured. Intended for non-volatile ferroelectric memory, lead zirconium titanate was deposited onto a seed layer of perovskite structure to prevent the growth of the unwanted pyrochlore phase. To function as buffer layers for superconductor applications, epitaxial CeO2, YSZ, SrTiO3, LaAlO3, Y2O3, and Yb2O3 coatings on single crystal and textured nickel substrate were investigated. Electronic analyses and characterization, using SEM, EDS, XRD, and X-ray pole figures, were presented.