Abstract
An approach is proposed to develop recording materials for high speed phase change optical data storage. It utilizes a thin film alloy mixture between a stoichiometric GeSbTe alloy and an additive ternary telluride alloy. Selection rules for an additive alloy are suggested. For a test, (Ge1Sb2Te4)1−x(Sn1Bi2Te4)x thin films are deposited by co-sputtering and their structural and thermal properties are studied. Ge1Sb2Te4 and Sn1Bi2Te4 are found to form a completely soluble pseudo-binary system, whose crystalline lattice parameters obey Vegard’s rule over the entire range of x (0<x<1). Furthermore, the alloy mixtures display an increasing tendency for crystallization with Sn1Bi2Te4 content. Dynamic tests of disk samples are made to show the effectiveness of the approach for high speed erasure.
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