Abstract
We propose a technology for the synthesis of thin diamond films, which allows integrated emission elements of the vacuum triode type to be created on a substrate surface. The process includes three main stages: (i) deposition of a thin diamond film onto a silicon substrate; (ii) lithographic procedure with an aluminum mask; and (iii) post-growth in a regime ensuring required emission properties. An emission triode design is presented that can be realized using the proposed technology.
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