Abstract
The properties of thin CN x layers prepared by rapid thermal annealing (RTA) are compared with CN xlayers obtained from N 2 plasma treatment. Carbon films of 6000 Å thickness were deposited by magnetron sputtering system on p-type silicon substrates. The samples were treated in an RTA system in N 2 atmosphere at a temperature above 800̊C. Some of the samples were treated in an N 2 plasma. The resulting CN x layers were analyzed by XPS (X-ray photoelectron spectroscopy) technique. The concentration of the incorporated nitrogen and carbon in the layer depths were analyzed by consecutive etching and measurement of the XPS spectra. This showed that maximum depth of incorporated nitrogen atoms in the carbon layer after 800̊C, 1 min RTA in N 2 was about 100 A ̊ , while in the N 2 plasma treated samples a nitrogen concentration of 6% was observed at 150 A ̊ . The electrical resistance of the layers rose with increase of the nitrogen concentration in the layers. © 1998 Elsevier Science Ltd. All rights reserved
Published Version
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