Thin active region, type II superlattice photodiode arrays: Single-pixel and focal plane array characterization

Abstract

We have measured the radiometric properties of two midwave infrared photodiode arrays (320×256pixel2 format) fabricated from the same wafer comprising a thin (0.24μm), not intentionally doped InAs∕GaSb superlattice between a p-doped GaSb layer and a n-doped InAs layer. One of the arrays was indium bump bonded to a silicon fanout chip to allow for the measurement of properties of individual pixels, and one was bonded to a readout integrated circuit to enable array-scale measurements and infrared imaging. The superlattice layer is thin enough that it is fully depleted at zero bias, and the collection efficiency of photogenerated carriers in the intrinsic region is close to unity. This simplifies the interpretation of photocurrent data as compared with previous measurements made on thick superlattices with complex doping profiles. Superlattice absorption coefficient curves, obtained from measurements of the external quantum efficiency using two different assumptions for optical coupling into the chip, bracket values calculated using an eight-band k∙p model. Measurements of the quantum efficiency map of the focal plane array were in good agreement with the single-pixel measurements. Imagery obtained with this focal plane array demonstrates the high uniformity and crystal quality of the type II superlattice material.