Abstract
The spectral dependence of the refractive index n and extinction coefficient k of chemical-vapor-deposited (CVD) silicon oxide film on silicon wafer has been determined. The results are used to calculate spectral absorbances for 0.1–2 μm thick oxide films with unchanged structure. The dependence on thickness of the position of Si-O stretching ( vM) has been investigated. The main factor influencing the frequency is the transmission factor at the air/film and film/substrate boundaries. In the limit of d → 0, vM corresponds to the maximum of the Im (ε) function.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
