Abstract
The efficiency increase by inserting quantum wells in a p-i-n solar cell has already been studied practically and theoretically over the years. Here we present a Multi-Quantum-well Single-Junction GaAs/GaSb solar cell which is simulated using Silvaco TCAD, where thicknesses of different layers have been varied to obtain the optimum thickness for maximum efficiency. Comparison is also presented for the same between the solar cells with and without the inclusion of quantum wells.
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