Abstract
Colloidal quantum dots (CQDs) solar cells filtered with lead sulfide (PbS) have provided a great alternate for lasting solar device. This is due to its capability of reaping infrared photons, increased exciton generation and tunable bandgap. However, creating a highly stable PbS CQD with high conversion efficiency is challenge on the grounds to the material quality of the PbS CQD based absorber layer. Power conversion efficiency (PCE) can be put up by reducing the bulk defect density forth at an optimum absorber layer thickness. Here in this research article effect of absorber layer thickness and bulk defect density is investigated for wide bandgap (Eg=1.56 eV) based PbS CQD absorber layer solar cell in order to ameliorate the PCE. This has been achieved by wavering the thickness from 50 nm to 500 nm and the bulk defect density from 1 x 1014 cm-3 to 1 x 1016 cm-3 in 10 steps each. Simulation are carried using SCAPS-1D and it published the uppermost PCE of 13.14 at bulk defect density of 1014 cm-3 and the thickness of 500 nm.
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