Abstract
In thin-film silicon research, it is essential to have an accurate and fast method for the determination of the thickness and material properties of layers down to 20nm thick. We report on the interpretation of optical measurements by spectroscopy of reflection and transmission in the range 400–1000nm. A method is developed to fit these spectra based on the O’Leary–Johnson–Lim model and material properties obtained from thicker layers. These results are correlated with the results obtained from other techniques for accurate thickness measurements. We conclude that a reliable fit of the optical measurements is possible down to a layer thickness of 20nm.
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