Abstract
In this study, the chemical bath deposition technique was used to produce tin sulfide thin films. The SnS films have been prepared using stannous chloride as a tin ion source and sodium thiosulphate as a sulfur ion source. Ethylenediaminetetraacetic acid disodium salt-2-hydrate was used as complexing agent in the chemical bath deposition process. The crystallographic analysis and film thickness were characterized using X-ray diffraction and profilometer, respectively.There were many deposition parameters which influenced the deposition of SnS films. Each deposition parameter influenced all the others. Based on the experimental results, the thickest films were obtained from a solution of pH 12, deposition time of 3 hours,bath temperature of 50 °C, 0.15M of SnCl2 and 0.5 M of Na2S2O3 solution.
Highlights
Investigation and control of film thickness are important in many applications such as semiconductor processing, thin films, optics and magnetic media
We report the influence of various deposition parameters on the properties of tin sulphide thin films using chemical bath deposition
Tin sulphide thin films were deposited on optical microscope slide from bath solution which containing stannous chloride, ethylenediaminetetraacetic acid disodium salt-2-hydrate (Na2EDTA) and sodium thiosulphate
Summary
Investigation and control of film thickness are important in many applications such as semiconductor processing, thin films, optics and magnetic media. The film thickness has a strong influence on the band gap, surface roughness, optical and electrical properties. Because of these reasons, there have been many studies about the film thickness using various ways such as profilometer[1,2,3,4,5,6,7], ellipsometer [8], auger electron spectroscopy[9], interferometric method [10,11,12,13], weight-difference method [14,15], gravimetric method [16], stylus technique [17], Taylor-Hobson system [18], Fizzau method [19] and atomic force microscopy [20,21,22,23]. We describe for the first time, an investigation of the thickness of the chemical bath deposited SnS films using profilometer
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