Abstract
Breakdown voltage distribution, Weibull slopes, and area scaling factors have been investigated for HfO/sub 2/ gate dielectrics in order to gain a better understanding of the breakdown mechanism. Weibull slope of thick HfO/sub 2/ (e.g., /spl beta//spl ap/4 for EOT=2.5 nm) is smaller than that of SiO/sub 2/ with similar physical thickness, whereas /spl beta/ of the thinner HfO/sub 2/ (e.g., /spl beta//spl ap/2 for EOT=1.4 nm) is similar to that of SiO/sub 2/. The implication of the thickness dependence of /spl beta/ is discussed.
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