Abstract
The dependence of kinetic parameters on thickness and temperature in p-CdTe and p-PbTe thin films deposited on glass substrates has been studied. In the case of diffuse scattering of charge carriers, the surface mobility and mobility within grains, the effective mean free path, and the sizes of crystalline grains for thin PbTe films are calculated. The mechanisms of current carrier transfer at grain boundaries associated with thermionic emission have been established. The contribution of scattering at grain boundaries and the surface of thin films of cadmium and lead tellurides is distinguished.
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