Abstract
The temperature dependency of kinetic parameters in p-PbTe and p-CdTe thin films formed on glass substrates has been investigated. The surface mobility of current carriers in PbTe films was computed as a function of temperature under the assumption of diffuse scattering of charge carriers. The mechanisms of intergranular current carrier transfer related with thermoelectronic emission are established. The role of surface scattering and intergranular boundaries in thin films of lead and cadmium tellurides is addressed.
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