Abstract
Photoacoustic (PA) spectra of high-resistivity GaAs with and without damaged surface layers are presented, emphasizing their sample thickness dependence. When the thickness was reduced below the thermal diffusion length, PA signals increased remarkably provided the absorption coefficient was larger than 10 cm-1. The signals below the fundamental absorption edge were strongly enhanced by the absorption due to damaged layers. An interpretation of the overall results of the experiment indicates a possible application of the PA technique to characterization of solid samples.
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