Abstract
As a promising functional material, ferroelectric Pb(ZrxTi1−x)O3 (PZT) are widely used in many optical and electronic devices. Remarkably, as the film thickness decreases, the materials’ properties deviate gradually from those of solid materials. In this work, multilayered PZT thin films with different thicknesses are fabricated by Sol-Gel technique. The thickness effect on its microstructure, ferroelectric, and optical properties has been studied. It is found that the surface quality and the crystalline structure vary with the film thickness. Moreover, the increasing film thickness results in a significant increase in remnant polarization, due to the interfacial layer effect. Meanwhile, the dielectric loss and tunability are strongly dependent on thickness. In terms of optical properties, the refractive index of PZT films increase with the increasing thickness, and the photorefractive effect are also influenced by the thickness, which could all be related to the film density and photovoltaic effect. Besides, the band gap decreases as the film thickness increases. This work is significant for the application of PZT thin film in optical and optoelectronic devices.
Highlights
Ferroelectric Pb(Zrx,Ti1−x )O3 (PZT) thin films are extremely attractive for the ferroelectric random access memory, optical modulator, photoelectric switch, optical waveguide structure, and UV detection owing to the excellent optoelectronic and electrical properties [1,2,3,4,5,6]
The X-ray diffraction pattern shown in Figure 2a reveals that all the PZT film deposited on
The hysteresis loops and permittivity are greatly affected by the film thickness, especially the remnant polarization Pr, which increases by 213.8% as the film thickness changes from ~400 to ~800 nm
Summary
Ferroelectric Pb(Zrx ,Ti1−x )O3 (PZT) thin films are extremely attractive for the ferroelectric random access memory, optical modulator, photoelectric switch, optical waveguide structure, and UV detection owing to the excellent optoelectronic and electrical properties [1,2,3,4,5,6]. Ranging in thickness from tens of nanometers to tens of microns, high quality PZT films are needed for a variety of applications [7]. The film thickness is a crucial factor affecting device performance besides some other factors including. The thickness effect would become more pronounced when the films’ thickness vary from micrometer to nanometer scale [15]. Previous investigations mainly focus on the study of PZT films’ thickness effect on microstructure and ferroelectric properties [16,17,18,19]. Ong et al found that tensile stresses decrease and the dielectric constant increases with the increasing thickness of the PZT film, ranging from ~100 to
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