Abstract
Pb(ZrxTi1-x)O3 (PZT) thin films with different thicknesses and compositions near the morphotropic phase boundary (MPB) were deposited on a pseudocubic LaNiO3 (LNO) thin film electrode by chemical solution deposition (CSD) in order to elucidate effect of film thickness on the electrical properties of the resultant PZT thin films. The crystal symmetry of the resultant PZT thin films changed from tetragonal to rhombohedral with increasing PbZrO3 concentration as well as with increasing film thickness or decreasing residual stress in the film. The residual stress and the lattice constants were measured by Raman spectroscopy and from X-ray diffraction patterns of the PZT thin films with different thicknesses and compositions, respectively. As a result, compressive residual stress was confirmed from the change in the lattice constants along a- and c-axes. In addition, residual stress increased with decreasing film thickness, which shifted the MPB composition toward the Zr-rich composition, depending on the film thickness.
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