Abstract
High quality ZnS/GaAs and ZnS/GaP epilayers are grown by hot wall epitaxy. The full width at half maximum (FWHM) of the double crystal rocking curves (DCRC) and photoluminescence (PL) are measured to investigate the crystalline quality of ZnS/GaAs and ZnS/GaP epilayers. The best value of the FWHM of the DCRC for ZnS/GaAs epilayers at 3.8 μm thickness is 373 arcsec, and for ZnS/GaP epilayers at 4.7 μm thickness of 173 arcsec. The PL spectra of ZnS/GaAs and ZnS/GaP epilayers reveal very strong near-edge emission peaks, no deep level peaks and self-activated peaks. The band gap energy E g for ZnS epilayer is measured at 3.729 eV at the room temperature. The tensile strain due to the lattice mismatch and the thermal expansion coefficient difference between ZnS epilayer and GaAs (or GaP) substrate is existed in ZnS epilayers. In this study, the thickness dependence of DCRC and PL for ZnS epilayers is analyzed taking into account the tensile strain.
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