Abstract
High quality ZnS epilayers were grown on GaAs(100) substrate by hot wall epitaxy. The optimum growth conditions for high quality ZnS epilayer were found. Near band-edge photoluminescence (PL) spectrum of high quality ZnS epilayers showed sharp and narrow exciton peaks and no self-activated peaks. The room temperature energy gap of ZnS/GaAs was found to be 3.729 eV from the experimentally observed free exciton PL peaks. The existence of the free exciton at room temperature reveals that the crystallinity of ZnS epilayers is excellent. The crystallinity became better with the increasing epilayer thickness according to the result of PL and the double crystal rocking curve. The temperature dependence of the PL linewidth broadening was analyzed in terms of exciton scattering process. From the splitting of the heavy hole and the light hole exciton peaks, the strain was identified.
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