Thickness dependence of conductivity in Bi2Se3 topological insulator

V V Chistyakov,J C A Huang,A N Domozhirova,V V Marchenkov

doi:10.1088/1742-6596/1389/1/012051

Abstract

The electrical resistivity of thin films of a topological insulator of Bi2Se3 with a thickness of 10 nm to 75 nm, single crystal of Bi2Se3 with thickness of 0.65 mm in the temperature range from 4.2 to 300 K was measured. A size effect in the electrical conductivity of Bi2Se3 films was observed, i.e. linear dependence of the conductivity of the sample on its inverse thickness. It was suggested that similar effects should be observed in other TIs and systems with non-uniform distribution of direct current over the cross section of the sample.

Highlights

IntroductionThe study of new topological materials [1,2,3] is one of the main directions of modern condensed matter physics
The study of new topological materials [1,2,3] is one of the main directions of modern condensed matter physics. Such materials have a rich potential for use in electronics and spintronics devices, since they have unique electronic properties arising from their unusual band structure
The electric current I is passed through the sample of thickness d and width c, and the voltage U is measured between the potential leads located at a distance L

Summary

Introduction

The study of new topological materials [1,2,3] is one of the main directions of modern condensed matter physics Such materials have a rich potential for use in electronics and spintronics devices, since they have unique electronic properties arising from their unusual band structure. Electrons in topological insulators are Dirac fermions with a linear dispersion law, and their spins are rigidly connected with their momentum Elastic backscattering in such a system is forbidden in the absence of magnetic impurities [3, 4]. This feature of TI leads to the emergence of spin polarization of charge carriers and the possibility of a spin-polarized current flowing near the TI surface with practically no loss [5]. This spin-polarized surface current can be used for spintronic devices

Objectives

Results

Conclusion