Abstract
The uniformity of a Ga 1− x Al x As layer grown by liquid phase epitaxy was investigated as a function of the growth temperature in the range of 600 to 800°C. Lowering the growth temperature causes the growth rate to decrease, which contributes to remarkable reductions in both the normalized edge growth height ( H) and the thickness variation (σ) over the wafer. At a growth temperature of 600°C, the flat Ga 1− x Al x As (solid composition, x = 0.45 ± 0.008) layer of 2.058 ± 0.07 μm ( σ/ d = 3.4%) can be obtained with an edge growth height of 2.92 μm ( H = 1.25). On the other hand, at a short growth time of 0.3 s, the variation of layer thickness of less than ±0.007 μm (±8.9%) does not depend on the growth temperature. The probable lowest limit in a flat layer can be varied by the initial supersaturation.
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